Description:As Lockheed Martin's infrared (IR) center of excellence, Santa Barbara Focalplane designs and produces industry-leading sensors that guide the world's most advanced platforms-from advanced tactical fighters to satellites in high orbit. The Detector Research and Development department at Lockheed Martin - Santa Barbara Focalplane is currently searching for qualified Research Scientists to join our team focused on developing next-generation infrared barrier photo-detectors spanning from near-IR to long-wave IR.
Expertise is desired in the development of linear-mode or Geiger-mode avalanche photodiodes (APDs), especially with a focus on testing and analysis of APD devices. Additional experience in other III-V semiconductor optoelectronic (photonic) devices such as P-I-N diodes, Schottky barrier photodiodes, heterojunction barrier photodiodes (nBn, XBn), phototransistors, lasers, or light emitting diodes (LEDs) is favorable
The team member selected for this position will primarily perform process and material development for advanced barrier and other infrared detectors grown by molecular beam epitaxy.
Typical R&D secondary responsibilities also include leading IRAD projects, providing technical direction, financial oversight, and customer interface for monthly presentations and/or final written reports. Work is performed on multiple IRAD and CRAD projects simultaneously in a dynamic environment. In addition, may assume project leadership for technology transfers from other business entities.
The successful candidate shall possess experience in semiconductor materials and processing, and demonstrate extensive knowledge of device physics, devices and semiconductor wafer characterization techniques.
Excellent written and verbal communication skills, and ability to work as part of a team and build effective relationships are essential.
Experience in MATLAB coding and Microsoft PowerPoint presentation creation is required.
Must be a US citizen in order to obtain entrance to facility.
Familiarity with III-V semiconductor wafer processing and/or with infrared focal plane array operation principles is highly desired. Familiarity with molecular-beam epitaxy growth is a plus.
• Design, processing, and/or testing of linear-mode or Geiger-mode avalanche photodiodes (APDs)
• III-V semiconductor optoelectronic (photonic) devices such as P-I-N diodes, Schottky barrier photodiodes, heterojunction barrier photodiodes (nBn, XBn), phototransistors, lasers, or light emitting diodes (LEDs)
Active clearance is highly desirable, but is not a requirement for the position at any point during employment.
Lockheed Martin is an Equal Opportunity/Affirmative Action Employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, pregnancy, sexual orientation, gender identity, national origin, age, protected veteran status, or disability status. Join us at Lockheed Martin, where your mission is ours. Our customers tackle the hardest missions. Those that demand extraordinary amounts of courage, resilience and precision. They're dangerous. Critical. Sometimes they even provide an opportunity to change the world and save lives. Those are the missions we care about.
As a leading technology innovation company, Lockheed Martin's vast team works with partners around the world to bring proven performance to our customers' toughest challenges. Lockheed Martin has employees based in many states throughout the U.S., and Internationally, with business locations in many nations and territories. Experience Level: Experienced Professional Business Unit: MISSILES AND FIRE CONTROL Relocation Available: Yes Career Area: Materials Engineering Clearance Level: Secret Type: Full-Time Virtual Location: no Work Schedule: 4X10A- 4 10 hr days Mon-Thurs; Fr/Sa/Su off Shift: First
Posting ID: 552784965Posted: 2020-05-21